BSP170P L6327

BSP170P SIPMOS® Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS(on),max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free BSP170P PG-SOT223 L6327: 1000pcs/reel BSP170P Yes Packing Non Dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current ID T A=25 °C -1.9 T A=70 °C -1.5 -7.6 Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=1.9 A, R GS=25 Ω Avalanche energy, periodic limited by E AR Tjmax Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD class mJ 0.18 I D=1.9 A, V DS=48 V, di /dt =-200 A/µs, T j,max=150 °C T A=25 °C JESD22-C101 (HBM) -6 kV/µs ±20 V 1.8 W -55 ... 150 °C 1A (250V to 500V) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 2.52 70 A page 1 2008-03-26 BSP170P Parameter Values Symbol Conditions Unit min. typ. max. - - 20 K/W minimal footprint - - 110 K/W 6 cm2 cooling area1) - - 70 Thermal characteristics Thermal resistance, junction -soldering point R thJS SMD version, device on PCB: R thJA Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -2.1 -3 -4 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1.9 A - 239 300 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.9 A 1.3 2.6 - S 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.52 page 2 2008-03-26 BSP170P Parameter Values Symbol Conditions Unit min. typ. max. - 328 410 - 105 135 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 38 48 Turn-on delay time t d(on) - 14 21 Rise time tr - 28 42 Turn-off delay time t d(off) - 92 138 Fall time tf - 60 90 Gate to source charge Q gs - -1.4 -1.9 Gate to drain charge Q gd - -4.9 -7.4 Gate charge total Qg - -10 -14 Gate plateau voltage V plateau - -4.34 - V - - -1.98 A - - -7.6 - -0.83 -1.1 V - 36 54 ns - 41 62 nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=10 V, I D=-1.9 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=-48 V, I D=-1.9 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Rev 2.52 Q rr T A=25 °C V GS=0 V, I F=-1.9 A, T j=25 °C V R=30 V, I F=|I S|, di F/dt =100 A/µs page 3 2008-03-26 BSP170P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 2.1 1.8 1.8 1.5 1.5 -I D [A] P tot [W] 1.2 0.9 1.2 0.9 0.6 0.6 0.3 0.3 0 0 0 40 80 120 0 160 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 10 µs 100 µs limited by on-state resistance 0.5 1 ms 10 ms 0.2 101 100 100 ms -I D [A] Z thJS [K/W] 0.1 DC 0.02 10-1 100 10-2 10-1 0.1 1 10 100 10-5 0.01 10-4 single pulse 10-3 10-2 10-1 100 101 102 t p [s] -V DS [V] Rev 2.52 0.05 page 4 2008-03-26 BSP170P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 1000 -7 V 900 -20 V 6 -10 V -6V 800 -5.5 V 5 700 R DS(on) [mΩ] -I D [A] -4 V 4 -5 V 3 -4.5 V 500 -5 V 400 -5.5 V -6 V 300 -4.5 V 2 600 -7 V -10 V 200 1 -20 V -4V 100 0 0 0 1 2 3 4 5 0 1 2 -V DS [V] 3 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3 3.5 3 2.5 g fs [S] -I D [A] 2 2 1.5 1 1 0.5 125 °C 25 °C 0 0 0 1 2 3 4 5 Rev 2.52 0 0.5 1 1.5 2 2.5 -I D [A] -V GS [V] page 5 2008-03-26 BSP170P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA 600 550 5 500 450 max. 4 98 % 350 -V GS(th) [V] R DS(on) [mΩ] 400 300 250 typ. typ. 3 2 200 min. 150 1 100 50 0 0 -60 -20 20 60 100 140 -60 -20 20 T j [°C] 60 100 140 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 101 150 °C, typ 25 °C, 98% Ciss 100 150 °C, 98% I F [A] C [pF] Coss 102 Crss 10-1 25 °C, typ 101 10-2 0 5 10 15 20 25 -V DS [V] Rev 2.52 0 0.5 1 1.5 2 2.5 3 -V SD [V] page 6 2008-03-26 BSP170P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD 101 16 14 12 10 30 V 10 0 V GS [V] -I AV [A] 12 V 25 °C 100 °C 125 °C 48 V 8 6 4 2 10-1 0 100 101 102 103 104 t AV [µs] 0 5 10 15 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 70 -V BR(DSS) [V] 65 60 55 50 -60 -20 20 60 100 140 T j [°C] Rev 2.52 page 7 2008-03-26 BSP170P Package Outline SOT-223: Outline Footprint Packaging Tape Operating and storage temperature Dimensions in mm Rev 2.52 page 8 2008-03-26 BSP170P Rev 2.52 page 9 2008-03-26